Ion Implantation

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Ion Implantation and Synthesis of Materials

Ion Implantation and Synthesis of Materials
Author :
Publisher : Springer Science & Business Media
Total Pages : 271
Release :
ISBN-10 : 9783540452980
ISBN-13 : 3540452982
Rating : 4/5 (982 Downloads)

Book Synopsis Ion Implantation and Synthesis of Materials by : Michael Nastasi

Download or read book Ion Implantation and Synthesis of Materials written by Michael Nastasi and published by Springer Science & Business Media. This book was released on 2007-05-16 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.


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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and c
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The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas