A Comparative Analysis Of Chemical Vapor Deposition Techniques For The Growth Of Iii V Epitaxial Films

Download or read book A Comparative Analysis of Chemical Vapor Deposition Techniques for the Growth of III-V Epitaxial Films written by Timothy J. Anderson and published by . This book was released on 1988 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: A program to compare the chloride, hydride and metal organic chemical vapor deposition techniques is described. A deposition system capable of depositing films by all three techniques was constructed and equipped with a modulated molecular beam mass spectrometer and, more recently, A Raman spectrometer. The thermal decomposition kinetics of NH3, PH3 and AsH3 were measured and the results applied to reactor operation. The hydride source region was analyzed and design procedure established. The unintentional incorporation of Si in GaAs and InP with the MOCVD process was investigated and methods of reducing these levels suggested. Substrates preparation procedures were compared using UHV surface analysis tools. A significatn amount of hydrogen was found in GaAs (100) substrates. Keywords: Vapor phase epitaxy, III-V semiconductors, Thin films, Ammonia, Phosphides, Gallium arsenides. (MJM).