Design Of Gallium Arsenide And Indium Phosphide Based Heterojunction Bipolar Transistors For High Speed Performance Gallium Arsenide Indium Phosphide

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DESIGN OF GALLIUM ARSENIDE- AND INDIUM PHOSPHIDE-BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED PERFORMANCE (GALLIUM ARSENIDE, INDIUM PHOSPHIDE).

Author	: JUNTAO HU
Publisher	:
Total Pages	: 474
Release	: 1991
ISBN-10	: UOM:39015021908770
ISBN-13	:
Rating	: 4/5 ( Downloads)

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Book Synopsis DESIGN OF GALLIUM ARSENIDE- AND INDIUM PHOSPHIDE-BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED PERFORMANCE (GALLIUM ARSENIDE, INDIUM PHOSPHIDE). by : JUNTAO HU

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DESIGN OF GALLIUM ARSENIDE- AND INDIUM PHOSPHIDE-BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED PERFORMANCE (GALLIUM ARSENIDE, INDIUM PHOSPHIDE). Related Books