Epitaxial Growth Of 6h Silicon Carbide In The Temperature Range 1320 To 1390 C

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Epitaxial Growth of 6H Silicon Carbide in the Temperature Range 1320 ̊to 1390 ̊C

Author	: Herbert A. Will
Publisher	:
Total Pages	: 20
Release	: 1974
ISBN-10	: UIUC:30112106749515
ISBN-13	:
Rating	: 4/5 ( Downloads)

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Book Synopsis Epitaxial Growth of 6H Silicon Carbide in the Temperature Range 1320 ̊to 1390 ̊C by : Herbert A. Will

Download or read book Epitaxial Growth of 6H Silicon Carbide in the Temperature Range 1320 ̊to 1390 ̊C written by Herbert A. Will and published by . This book was released on 1974 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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