Growth Processing And Characterization Of Beta Silicon Carbide Single Crystals

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Growth, Processing, and Characterization of Beta-silicon Carbide Single Crystals

Growth, Processing, and Characterization of Beta-silicon Carbide Single Crystals
Author :
Publisher :
Total Pages : 25
Release :
ISBN-10 : OCLC:227552050
ISBN-13 :
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Book Synopsis Growth, Processing, and Characterization of Beta-silicon Carbide Single Crystals by :

Download or read book Growth, Processing, and Characterization of Beta-silicon Carbide Single Crystals written by and published by . This book was released on 1969 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of hydrogen is described. Hall and resistivity measurements and electron spin resonance measurements are discussed. The results show that the quality of the epitaxially grown material is comparable with that of the best solution grown crystals. Processing steps such as oxidation, masking, and etching have been performed and simple electroluminescent diodes have been fabricated. (Author).


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Growth, Processing, and Characterization of Beta-silicon Carbide Single Crystals
Language: en
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Authors:
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Type: BOOK - Published: 1969 - Publisher:

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Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of h
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The report summarizes the development program in the growth of large high purity beta silicon carbide crystals. Conditions for stable beta growth were partially
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The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of b