Inp And Related Compounds

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Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan

Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan
Author :
Publisher : CRC Press
Total Pages : 1002
Release :
ISBN-10 : 075030250X
ISBN-13 : 9780750302500
Rating : 4/5 (500 Downloads)

Book Synopsis Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan by : Ikegami

Download or read book Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.


Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan Related Books

Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan
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Pages: 1002
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Type: BOOK - Published: 1993-01-01 - Publisher: CRC Press

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Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and r
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Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the
Physical Properties of III-V Semiconductor Compounds
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Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
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Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor m