Single Crystal Epitaxy And Characterization Of Beta Silicon Carbide

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Single Crystal Epitaxy and Characterization of Beta-Silicon Carbide
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The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of b
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Epitaxial vapor deposition of beta-silicon carbide on (111) beta-silicon carbide platelets and diborane doping were used to grow p-type layers on n-type substra
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Changes in crystal size and morphology were obtained by modifying the process for growing crystals of betasilicon carbide from solution in carbon-saturated melt
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Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and r
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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a num