Small Molecule Photoresist Materials For Next Generation Lithography

Download or read book Small Molecule Photoresist Materials for Next Generation Lithography written by Marie Elyse Krysak and published by . This book was released on 2013 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photolithography remains the most efficient method to create semiconductor devices. Moore's law states that the number of transistors per integrated circuit will double every four years. In order to successfully continue this trend of miniaturizing feature sizes, new, smaller sized patterning materials must be studied. Small molecule photoresists are being developed for high resolution patterning. Low molecular weight amorphous materials, or molecular glasses (MGs), have emerged as alternatives to polymeric resist materials. They combine the benefits of small molecular size with the favorable aspects of polymers, such as a high glass transition temperature (Tg) and the ability to form thin films. Inorganic-based nanoparticles are currently being explored as next generation photoresists. These materials are similar in architecture to MGs, but are comprised of an inorganic core that provides excellent thermal stability and resistance to plasma etching. This research focuses on the synthesis and characterization both MG and nanoparticle resist materials for high resolution patterning. The materials studied are designed for use with Extreme Ultraviolet Lithography (EUV-L), using a wavelength of 13.5 nm. This next-generation technique is believed to be the key to extending patterning capabilities to sub 30 nm and beyond. Small molecule resists materials have been specifically designed for use with alternative lithographic processing techniques. Small, rigid structures were designed for vapor deposition, which has been examined as an alternative to spin-coating. This process has been shown to deposit a uniform film, free from defects and impurities, without the use of solvent. Sub-millisecond laser heating is a relatively new technique that is studied as an alternative the post exposure bake. This method has shown the ability to reduce line edge roughness while simultaneously improving resist sensitivity. Systematically designed MG photoacid generators have been used to characterize the acid diffusion behavior during laser heating as compared to traditional hotplate heating. The development of resist materials for these new processes is a critical step in the preparation of these processes for widespread use in lithographic processing. ii.