Thermionic Emission Diffusion Model Of Inp Based Pnp Heterojunction Bipolar Transistor With Non Uniform Base Doping

Download or read book Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-uniform Base Doping written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past few years, GaAs and InP and, more recently, GaN based Npn and Pnp Heterojunction Bipolar Transistors (HBTs) have been grown and their performance has been evaluated in great details due to their potential applications in microwave, millimeter-wave, optoelectronics and high-speed applications. This model includes the physics of hole thermionic-emission-diffusion injection at the emitter-base heterojunction and transport of holes across a linearly doped base, a calculation of the recombination currents in the base current including the effects of linear base doping, and a comparison of the effects of linear and uniform doping on current gain and base transit time. Our simulations show that the use of non-uniform doping in the base of Pnp HBTs helps increasing the DC current gain by as much as a factor of 4. Simultaneously, we show that the base transit time, which is the major component to the overall delay time, is reduced by factor of 2. This should help increasing the unit current gain frequency and high frequency performance of Pnp HBTs.