Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 4 New Materials Processes And Equipment

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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
Author :
Publisher : The Electrochemical Society
Total Pages : 488
Release :
ISBN-10 : 9781566776264
ISBN-13 : 1566776260
Rating : 4/5 (260 Downloads)

Book Synopsis Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment by : P. J. Timans

Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment written by P. J. Timans and published by The Electrochemical Society. This book was released on 2008-05 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.


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