Investigations Of The Molecular Beam Epitaxial Growth And Characteristics Of External Excitation Induced Non Equilibrium Phases Of Immiscible Iii V Compound Semiconductors

Download or read book Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors written by A. Madhukar and published by . This book was released on 1985 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: This program undertakes experimental and theoretical investigation of the role of growth kinetics and mechanism(s) in molecular beam epitaxial growth of III-V semiconductors and its possible control via laser excitation to effect metastable structures and phases. The experimental work on laser induced MBE growth is collaboratively carried out. Specifically, progress is reported on (i) Monte-Carlo computer simulations of MBE growth and predictions of the dynamics of reflection-high-energy-electron-diffraction (RHEED) intensities (ii) a theory of laser--induced-desorption (iii) Experimental studies of the RHEED intensity dynamics for GaAs/InxGa1-xAs(100) MBE growth (iv) the first realization of GaAs/InAs strained layer structures (with 7.4% lattice mismatch) and transmission electron microscopy studies showing high quality interfaces, and (v) establishment of a facility for magneto-absorption studies.