Theory And Applications Of Field Effect Transistors

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Advanced Field-Effect Transistors

Advanced Field-Effect Transistors
Author :
Publisher : CRC Press
Total Pages : 306
Release :
ISBN-10 : 9781003816263
ISBN-13 : 1003816266
Rating : 4/5 (266 Downloads)

Book Synopsis Advanced Field-Effect Transistors by : Dharmendra Singh Yadav

Download or read book Advanced Field-Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.


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In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by over